Subject | French | English |
met. | acier amélioré au cr- ni- mo avec une température de transition relativement basse | cr ni mo hardened and quenched steel having a comparatively low transition temperature |
el. | capacité MOS | MOS capacitor |
el. | circuit en échelle à transistors MOS | ladder-array of MOS transistors |
nat.sc. | circuit intégré à transistors MOS | complementary metal oxide semiconductor |
el. | circuit intégré à transistors MOS et bipolaires | MOS-bipolar transistor integrated circuit |
el. | circuit intégré à transistors MOS et bipolaires | hybrid MOS-bipolar i.c. |
el. | circuit logique dynamique à MOS | MOS dynamic logic circuit |
el. | circuit logique dynamique à MOS | dynamic MOS logic circuit |
comp. | circuit MOS | MOS circuit |
comp. | circuit MOS canal | nMOS circuit |
comp. | circuit MOS canal | n-channel MOS circuit |
el. | circuit MOS complémentaire | CMOS circuit |
comp. | circuit MOS dynamique | dynamic MOS circuit |
IT, el. | circuit MOS statiques | static MOS circuits |
nat.sc. | circuit MOS à charge négative | negative metal-oxide semi-conductor |
el. | circuit équivalent de la capacité MOS | MOS-capacitor equivalent circuit |
gen. | circuiterie MOS | MOS circuitry |
comp. | D-MOS | double diffusion MOS technology |
el. | dispositif MOS à oxyde épais | thick-oxide MOS device |
el. | instabilité des MOS à accumulation | enhancement MOS instability |
el. | instabilité du MOS | MOS instability |
health. | ki-mo | yaws |
commun., tech. | les technologies bipolaires arséniure de gallium ou du silicium, MOS, CMOS | gallium arsenide or silicon bipolar, MOS and CMOS technologies |
transp., nautic. | MEDA-MoS Autoroutes des la mer | MEDA Motorways of the Sea |
comp. | module de mémoire en MOS dynamique | dynamic memory device |
comp. | module MOS | metall-oxide semiconductor device |
comp. | module MOS | MOS device |
chem. | MoS2 | molybdenum disulphide |
IT, el. | MOS bipolaire | BiMOS |
nat.sc. | MOS complémentaire | complementary metal oxide semiconductor |
comp., MS | MOS de qualité de conversation | conversational quality MOS (A class of MOS values that takes into account listening quality in each direction, as well as bidirectional effects, such as delay and echo) |
comp., MS | MOS de qualité d'écoute | listening quality MOS (Within the VoIP industry, a commonly used class of MOS values that measures the quality of audio for listening purposes only, without taking into account any bidirectional effects, such as delay and echo) |
IT, tech., R&D. | MOS submicroniques | Submicron MOS |
IT, el. | MOS vertical | vertical MOS |
el. | MOS vertical | vertical-metal-oxide-semiconductor |
IT, el. | MOS à canal vertical | vertical MOS |
el. | MOS à double diffusion latérale | lateral double diffused MOS |
comp. | MOS à électrode à injection | floating gate avalanche injection MOS |
IT, dat.proc. | mémoire MOS | MOS memory |
comp., MS | note MOS qualité conversation | Conversational MOS (A prediction of the narrowband conversational quality MOS (MOS-CQ) of the audio stream that is played to the user. This value takes into account the listening quality of the audio played and sent across the network, the speech and noise levels for both audio streams, and echoes) |
comp., MS | note MOS qualité expédition | Sending MOS (A prediction of the wideband listening quality MOS (MOS-LQ) of the audio stream that is being sent from the user. This value takes into account the speech and noise levels of the user along with any distortions) |
comp., MS | note MOS qualité réseau | Network MOS (A prediction of the wideband listening quality MOS (MOS-LQ) of audio that is played to the user. This value takes into account only network factors such as codec used, packet loss, packet reorder, packet errors and jitter) |
comp., MS | note MOS qualité écoute | Listening MOS (A prediction of the wideband listening quality MOS (MOS-LQ) of the audio stream that is played to the user. This value takes into account the audio fidelity and distortion and speech and noise levels) |
el. | porte NON-ET à MOS | MOS NAND gate |
el. | porte NON-OU à MOS | MOS NOR gate |
comp. | procédé n-MOS | nMOS process |
comp. | RAM en MOS | MOS RAM |
el. | résistance à MOS | MOS resistor |
el. | semiconducteur MOS | metal-oxide semiconductor |
el. | semiconducteur MOS | metal oxide semiconductor |
el. | structure MOS | MOS structure |
el. | substrat pour MOS | MOS substrate |
el. | support pour MOS | MOS substrate |
comp. | technique MOS complémentaire | CMOS technique |
comp. | technique MOS complémentaire | complementary MOS technique |
comp. | technique MOS complémentaire | CMOS |
comp. | technique MOS à valeur de seuil ajustable | adjustable threshold MOS |
IT, el. | technologie de type MOS | metal oxide semiconductor technology |
IT, el. | technologie de type MOS | MOS technology |
IT | technologie de type MOS complémentaire | complementary MOS technology |
IT | technologie de type MOS complémentaire | CMOS technology |
IT, el. | technologie de type MOS à canal N | NMOS technology |
IT, el. | technologie de type MOS à canal N | negative-channel MOS technology |
IT, el. | technologie de type MOS à canal N | N-channel MOS technology |
comp. | technologie ED-MOS | enhancement depletion-load MOS technology |
comp. | technologie ED-MOS | ED-MOS |
IT | technologie MOS métal - oxyde - silicium | MOS technology |
comp. | technologie MOS | metal-oxide semiconductor technology |
comp. | technologie MOS | MOS technology |
comp. | technologie MOS canal | n-channel MOS technology |
comp. | technologie MOS canal | n-channel MOS |
comp. | technologie MOS canal | NMOS technology |
comp. | technologie MOS canal | n-channel metal-oxide-semiconductor technology |
comp. | technologie MOS canal de haute performance | high-performance n-channel MOS technology |
comp. | technologie MOS canal de haute performance | high-performance MOS |
comp. | technologie MOS canal à gate au silicium de densité élevée | high-density n-channel silicon-gate MOS technology |
comp. | technologie MOS canal à gate au silicium de densité élevée | HMOS technology |
IT | technologie MOS à canal P | P-MOS |
IT | technologie MOS à canal P | PMOS-technology |
IT | technologie MOS à canal P | positive-channel MOS technology |
IT | technologie MOS à canal P | p-channel MOS technology |
comp. | technologie MOS à diffusion double | double diffusion MOS technology |
comp. | technologie MOS à gate au silicium canal | n-channel silicon gate MOS technology |
el. | tension de perçage du MOS | MOS punch-through breakdown |
el. | transistor amplificateur MOS | MOS amplifying transistor |
el. | transistor amplificateur MOS | amplifying MOST |
el. | transistor amplificateur MOS | MOS amplifier |
el. | transistor MOS | metal-oxide-semiconductor transistor |
el. | transistor MOS | metal-oxide-silicon transistor |
el. | transistor MOS | MOS transistor |
el. | transistor MOS au silicium | silicon metal-oxide-semiconductor field-effect transistor |
el. | transistor MOS au silicium | silicon MOS transistor |
el. | transistor MOS de charge | load-MOST |
el. | transistor MOS de commutation | switching MOST |
el. | transistor MOS de commutation | MOS switch |
el. | transistor MOS de commutation | MOS switching transistor |
el. | transistor MOS de commutation | MOS digital element |
el. | transistor MOS en labyrinthe | maze-geometry MOS transistor |
el. | transistor MOS parasite | parasitic MOS transistor |
el. | transistor MOS parasite | parasitic field-effect-transistor |
el. | transistor MOS parasite | parasitic MOST |
el. | transistor MOS parasite | parasitic metal-oxide-semiconductor transistor |
el. | transistor MOS parasite | parasitic FET |
el. | transistor MOS parasite | MOS parasitic transistor |
comp. | transistor MOS à effet de champ | metal-oxide-semiconductor field effect transistor |
comp. | transistor MOS à effet de champ | MOS F ET |
el. | transistor MOS à effet de champ et à zone d'épuisement | depletion MOST |
el. | transistor MOS à effet de champ et à zone d'épuisement | depletion MOS field effect transistor |
el. | transistor MOS à effet de champ à accumulation | enhancement MOST |
el. | transistor MOS à effet de champ à accumulation | enhancement MOS field-effect transistor |
el. | transistor MOS à effet de champ à canal n par effet d'enrichissement | n-channel enhancement MOS field-effect transistor |
el. | transistor MOS à effet de champ à canal n par effet d'enrichissement | n-channel enhancement MOST |
el. | transistor MOS à effet de champ à canal n par effet d'enrichissement | enhancement n-MOST |
el. | transistor MOS à effet de champ à canal p par zone d'appauvrissement | p-channel depletion MOS field-effect transistor |
el. | transistor MOS à effet de champ à canal p par zone d'appauvrissement | p-channel depletion MOST |
el. | transistor MOS à effet de champ à canal p par zone d'appauvrissement | depletion p-MOST |
el. | transistor MOS à effet de champ à canal p par zone d'enrichissement | p-channel enhancement MOST |
el. | transistor MOS à effet de champ à canal p par zone d'enrichissement | p-channel enhancement MOS field-effect transistor |
el. | transistor MOS à effet de champ à canal p par zone d'enrichissement | enhancement p-MOST |
el. | transistor à effet de champ MOS à canal n par effet d'appauvrissement | n-channel depletion MOST |
el. | transistor à effet de champ MOS à canal n par effet d'appauvrissement | n-channel depletion MOS field-effect transistor |
el. | transistor à effet de champ MOS à canal n par effet d'appauvrissement | depletion n-MOST |
IT, nat.sc. | transistor à effet de champ, réalisé en technologie MOS | metal oxide semiconductor field-effect transistor |
IT, nat.sc. | transistor à effet de champ, réalisé en technologie MOS | Metal-Oxide Semiconductor Field Effect Transistor |
IT, nat.sc. | transistor à effet de champ, réalisé en technologie MOS | field effect transistor of MOS technology |