Subject | German | English |
el. | Belastungs-MOS-Transistor | load-MOST |
gen. | C-MOS-Technik | complementary MOS technology MOS : vgl. semiconductor |
comp. | D-MOS | double diffusion MOS technology |
microel. | die Diffusionen zu den VMOS- und n-MOS-Bauelementen selbstjustieren | self-align the diffusions to the V-groove and MOS devices |
microel. | doppeldiffundiertes MOS-Bauelement | DMOS device |
comp. | Doppeldiffusions-MOS-Technologie | double diffusion MOS technology |
microel. | Doppel-Poly-Si-Gate-MOS-Struktur | double polysilicon-gate MOS structure |
el. | doppelt diffundierter MOS-Transistor | double-diffused process |
microel. | DSA-MOS-Technik | diffused self-aligned MOS technique |
el. | dynamische MOS-Logikschaltung | dynamic MOS logic circuit |
el. | dynamische MOS-Logikschaltung | MOS dynamic logic circuit |
comp. | dynamische MOS-Schaltung | dynamic MOS circuit |
comp. | ED-MOS | enhancement depletion-load MOS technology |
comp. | ED-MOS | ED-MOS |
comp. | ED-MOS-Technik | enhancement depletion-load MOS technology (MOSÉET-Schaltungstechnik mit Anreicherungstyp-Schalttransistor und Verarmungstyp-Lasttransistor) |
comp. | ED-MOS-Technik | ED-MOS (MOSÉET-Schaltungstechnik mit Anreicherungstyp-Schalttransistor und Verarmungstyp-Lasttransistor) |
el. | ergänzendes MOS | complementary MOS |
el. | Ersatzschaltung eines MOS-Kondensators | MOS-capacitor equivalent circuit |
IT, nat.sc. | Feldeffekttransistor in MOS-Technik | field effect transistor of MOS technology |
IT, nat.sc. | Feldeffekttransistor in MOS-Technik | metal oxide semiconductor field-effect transistor |
IT, nat.sc. | Feldeffekttransistor in MOS-Technik | Metal-Oxide Semiconductor Field Effect Transistor |
microel. | Gate-Injektions-MOS-Transistor | GIMOS transistor |
microel. | Gatematerial für MOS-Transistoren | gate material for MOS transistors |
el. | Geometrieverhältnis von MOS-Transistoren | aspect ratio |
el. | Geometrieverhältnis von MOS-Transistoren | MOST aspect ratio |
comp., MS | Gesprächs-MOS | Conversational MOS (A prediction of the narrowband conversational quality MOS (MOS-CQ) of the audio stream that is played to the user. This value takes into account the listening quality of the audio played and sent across the network, the speech and noise levels for both audio streams, and echoes) |
comp. | hochdichte n-Kanal-Siliziumgate-MOS-Technologie | high-density n-channel silicon-gate MOS technology |
comp. | hochdichte n-Kanal-Siliziumgate-MOS-Technologie | HMOS technology |
comp. | Hochleistungs-MOS | high-performance n-channel MOS technology |
comp. | Hochleistungs-MOS | high-performance MOS |
comp. | Hochleistungs-MOS-Feldeffekttransistor | high-power MOSFET |
comp. | Hochleistungsn-Kanal-MOS-Technologie | high-performance n-channel MOS technology |
comp. | Hochleistungsn-Kanal-MOS-Technologie | high-performance MOS |
el. | hybride integrierte Schaltung mit MOS und bipolaren Transistoren | hybrid MOS-bipolar i.c. |
el. | hybride integrierte Schaltung mit MOS und bipolaren Transistoren | MOS-bipolar transistor integrated circuit |
comp., MS | Hör-MOS | Listening MOS (A prediction of the wideband listening quality MOS (MOS-LQ) of the audio stream that is played to the user. This value takes into account the audio fidelity and distortion and speech and noise levels) |
el. | Instabilität von Anreicherungs-MOS-Transistoren | enhancement MOS instability |
el. | Instabilität von MOS-Bauelementen | MOS instability |
el. | Kettenanordnung von MOS-Transistoren | ladder-array of MOS transistors |
microel. | Kleinsignalanalyse des MOS-Transistors | slug-Signal analysis of the MOS transistor |
comp. | Komplementär-MOS-Technik | CMOS technique |
comp. | Komplementär-MOS-Technik | complementary MOS technique |
comp. | Komplementär-MOS-Technik | CMOS |
el. | komplementäre MOS-Technik | combined metal oxide semiconductor |
IT | komplementäre MOS-Technik | complementary MOS technology |
IT | komplementäre MOS-Technik | CMOS technology |
microel. | komplementäre MOS-Technik | complementary metal-oxide semiconductor technology |
microel. | Kurzkanal-n-MOS-Bauelement | short-channel n-MOS device |
el. | MOS-Aufbau | MOS structure |
comp. | MOS-Bauelement | metall-oxide semiconductor device |
comp. | MOS-Bauelement | MOS device |
el. | MOS-Bauelement mit dicker Oxidschicht | thick-oxide MOS device |
microel. | MOS-Bauteil | MOS device |
microel. | MOS-Bauteil | metal-oxide semiconductor device |
gen. | MOS-Bipolartechnologie | bipolar MOS |
el. | MOS-Durchgreifspannung | MOS punch-through breakdown |
el. | MOS-Feldeffekttransistor | metal insulator semiconductor FET |
comp. | MOS-Feldeffekttransistor | metal-oxide-semiconductor field effect transistor |
comp. | MOS-Feldeffekttransistor | MOS F ET |
microel. | MOS-Feldeffekttransistor | metal oxide semiconductor field-effect transistor |
el. | MOS-Feldeffekttransistor mit zwei Gate-Elektroden | dual-gate MOS field-effect transistor |
el. | MOS-Feldeffekttransistor vom Verarmungstyp | depletion MOST |
el. | MOS-Feldeffekttransistor vom Verarmungstyp | depletion MOS field effect transistor |
el. | MOS-Feldeffekttransitor vom Anreicherungstyp | enhancement MOST |
el. | MOS-Feldeffekttransitor vom Anreicherungstyp | enhancement MOS field-effect transistor |
comp., MS | MOS für Gesprächsqualität | conversational quality MOS (A class of MOS values that takes into account listening quality in each direction, as well as bidirectional effects, such as delay and echo) |
comp., MS | MOS für Hörqualität | listening quality MOS (Within the VoIP industry, a commonly used class of MOS values that measures the quality of audio for listening purposes only, without taking into account any bidirectional effects, such as delay and echo) |
gen. | MOS im Submikronbereich | submicron MOS |
el. | MOS-Kondensator | metal insulator semiconductor capacitor |
el. | MOS-Kondensator | MIS capacitor |
el. | MOS-Kondensator | MOS capacitor |
gen. | MOS-Logikfamilie mit komplementären Ausgängen | complementary MOS (CMOS) |
gen. | MOS-Merkmalsgrössen im Submikronbereich | submicron feature size in MOS |
el. | MOS-NAND-Verknüpfungsglied | MOS NAND gate |
el. | MOS-NOR-Verknüpfungsglied | MOS NOR gate |
el. | MOS-Prozess | metal-oxide-semiconductor process |
el. | MOS-Prozess | MOS process |
comp. | MOS-RAM | MOS RAM |
comp. | MOS-Schaltkreis | MOS circuit |
microel. | MOS-Schaltkreis | MOS integrated circuit |
gen. | MOS-Schaltkreise | MOS circuits MOS : vgl. semiconductor |
microel. | MOS-Schaltkreise und MNOS-Transistoren auf demselben Chip vereinigen | combine MOS circuitry and MNOS transistors on the same chip |
microel. | MOS-Schaltkreistechnik | MOS circuit technology |
el. | MOS-Schalttransistor | MOS switch |
el. | MOS-Schalttransistor | switching MOST |
el. | MOS-Schalttransistor | MOS switching transistor |
el. | MOS-Schalttransistor | MOS digital element |
comp. | MOS-Schaltung in dynamischer Technik | dynamic MOS circuit |
el. | MOS-Siliziumtransistor | silicon metal-oxide-semiconductor field-effect transistor |
el. | MOS-Siliziumtransistor | silicon MOS transistor |
IT, dat.proc. | Mos-Speicher | MOS memory |
comp. | MOS-Speicherelektrodentechnik mit schwimmendem Gate | floating gate avalanche injection MOS (z. B. für RePROM) |
el. | MOS-Substrat | MOS substrate |
comp. | MOS-Technik | MOS technology |
comp. | MOS-Technik | metal-oxide semiconductor technology |
gen. | MOS-Technik | MOS metal-oxide-semiconductor technology |
comp. | MOS-Technik mit einstellbarem Transistorschwellwert | adjustable threshold MOS (Isolierschicht-FET für Speicherzelle) |
IT, el. | MOS-Technologie | metal oxide semiconductor technology |
IT, el. | MOS-Technologie | MOS technology |
comp. | MOS-Technologie | metal-oxide semiconductor technology |
el. | MOS-Thyristor | MOS controlled thyristor |
el. | MOS-Transistor | metal insulator semiconductor FET |
el. | MOS-Transistor | metal-oxide-semiconductor transistor |
el. | MOS-Transistor | metal-oxide-silicon transistor |
el. | MOS-Transistor | MOS transistor |
microel. | MOS-Transistor mit Diffusionsselbstjustage | diffusion self-aligned MOS transistor |
el. | MOS-Transistor mit Labyrinthgeometrie | maze-geometry MOS transistor |
el. | MOS-Träger | MOS substrate |
el. | MOS-Verstärkertransistor | amplifying MOST |
el. | MOS-Verstärkertransistor | MOS amplifying transistor |
el. | MOS-Verstärkertransistor | MOS amplifier |
el. | MOS-Widerstand | MOS resistor |
microel. | n-MOS-Planartransistor | planar n-MOS transistor |
microel. | n-MOS-Technik | n-MOS technology |
microel. | n-MOS-Technik | n-channel metal-oxide semiconductor technology |
comp., MS | Netzwerk-MOS | Network MOS (A prediction of the wideband listening quality MOS (MOS-LQ) of audio that is played to the user. This value takes into account only network factors such as codec used, packet loss, packet reorder, packet errors and jitter) |
comp. | n-Kanal-MOS | NMOS technology |
comp. | n-Kanal-MOS | n-channel MOS |
comp. | n-Kanal-MOS | n-channel MOS technology |
comp. | n-Kanal-MOS | n-channel metal-oxide-semiconductor technology |
comp. | n-Kanal-MOS-Schaltkreis | nMOS circuit |
comp. | n-Kanal-MOS-Schaltkreis | n-channel MOS circuit |
microel. | n-Kanal-MOS-Speicherzelle | n-channel MOS memory cell |
comp. | n-Kanal-MOS-Technologie | n-channel MOS technology |
comp. | n-Kanal-MOS-Technologie | NMOS technology |
comp. | n-Kanal-MOS-Technologie | n-channel MOS |
comp. | n-Kanal-MOS-Technologie | n-channel metal-oxide-semiconductor technology |
microel. | n-Kanal-MOS-Transistor | n-MOS transistor |
microel. | n-Kanal-MOS-Transistor | n-channel metal-oxide semiconductor transistor |
el. | N-Kanal-Anreicherungs-MOS-Feldeffekttransistor | n-channel enhancement MOST |
el. | N-Kanal-Anreicherungs-MOS-Feldeffekttransistor | n-channel enhancement MOS field-effect transistor |
el. | N-Kanal-Anreicherungs-MOS-Feldeffekttransistor | enhancement n-MOST |
comp. | n-Kanal-Siliziumgate-MOS-Technologie | n-channel silicon gate MOS technology |
el. | N-Kanal-Verarmungs-MOS-Feldeffekttransistor | n-channel depletion MOS field-effect transistor |
el. | N-Kanal-Verarmungs-MOS-Feldeffekttransistor | n-channel depletion MOST |
el. | N-Kanal-Verarmungs-MOS-Feldeffekttransistor | depletion n-MOST |
comp. | n-SG-MOS | n-channel silicon gate MOS technology |
microel. | Operationsverstärker in n-MOS-Technik | operational amplifier in n-channel MOS technology |
microel. | p-MOS-Technik | p-MOS technology |
el. | parasitärer MOS-Transistor | parasitic field-effect-transistor |
el. | parasitärer MOS-Transistor | parasitic metal-oxide-semiconductor transistor |
el. | parasitärer MOS-Transistor | parasitic MOST |
el. | parasitärer MOS-Transistor | parasitic FET |
el. | parasitärer MOS-Transistor | parasitic MOS transistor |
el. | parasitärer MOS-Transistor | MOS parasitic transistor |
IT | p-Kanal-MOS | PMOS-technology |
IT | p-Kanal-MOS | p-channel MOS technology |
IT | p-Kanal-MOS | positive-channel MOS technology |
IT | p-Kanal-MOS | P-MOS |
el. | P-Kanal-MOS-Feldeffekttransistor vom Anreicherungstyp | p-channel enhancement MOS field-effect transistor |
el. | P-Kanal-MOS-Feldeffekttransistor vom Anreicherungstyp | p-channel enhancement MOST |
el. | P-Kanal-MOS-Feldeffekttransistor vom Anreicherungstyp | enhancement p-MOST |
microel. | p-Kanal-MOS-Feldeffekttransistor vom Anreicherungstyp | p-channel enhancement MOS transistor |
el. | P-Kanal-MOS-Feldeffekttransistor vom Verarmungstyp | p-channel depletion MOST |
el. | P-Kanal-MOS-Feldeffekttransistor vom Verarmungstyp | p-channel depletion MOS field-effect transistor |
el. | P-Kanal-MOS-Feldeffekttransistor vom Verarmungstyp | depletion p-MOST |
microel. | p-Kanal-MOS-Speicherzelle | p-channel MOS memory cell |
microel. | p-Kanal-MOS-Technik | p-channel MOS technology |
microel. | p-Kanal-MOS-Transistor | p-channel MOS transistor |
microel. | p-Kanal-MOS-Transistor | p-channel metal-oxide semiconductor transistor |
microel. | reihenweise Anordnung von räumlich eng benachbarten MOS-Kondensatoren | linear array of closely spaced MOS capacitors |
microel. | Schaltkreis in n-Kanal-MOS-Technik | n-metal-oxide semiconductor circuit |
comp., MS | Sende-MOS | Sending MOS (A prediction of the wideband listening quality MOS (MOS-LQ) of the audio stream that is being sent from the user. This value takes into account the speech and noise levels of the user along with any distortions) |
microel. | Siliziumgatter-MOS-Bauelement | silicon-gate MOS device |
microel. | skalierte Ausführung von MOS-Bauelementen | scaled version of MOS devices |
IT, el. | statische MOS-Schaltungen | static MOS circuits |
microel. | TTL-kompatibler Ausgang auf C-MOS-Chip | TTL-compatible output on complementary-MOS chip |
microel. | V-MOS-Technik | V-groove MOS technology |
IT, el. | Vertikal MOS | vertical MOS |
microel. | Vierfach-MOS-Takttreiber | quad MOS clock driver |
microel. | Vierpolmodell des MOS-Transistors | two-port model of the metal-oxide semiconductor transistor |
microel. | vollkommen aus MOS-Transistoren aufbauen | construct entirely from MOS transistors |
microel. | wichtigster Parameter der MOS-Bauelemente | key MOS device parameter |
microel. | zentraler Parameter der MOS-Bauelemente | key MOS device parameter |
microel. | zwei Komplementär-MOS-Transistoren parallelschalten | connect two complementary MOS transistors in parallel |