Subject | English | German |
comp. | adjustable threshold MOS | MOS-Technik mit einstellbarem Transistorschwellwert (Isolierschicht-FET für Speicherzelle) |
comp. | adjustable threshold MOS | ATMOS |
microel. | adjustable threshold MOS transistor | ATMOS-Transistor |
gen. | bipolar MOS | MOS-Bipolartechnologie |
microel. | buried oxide isolation MOS technology | BOMOS-Technik |
microel. | combine MOS circuitry and MNOS transistors on the same chip | MOS-Schaltkreise und MNOS-Transistoren auf demselben Chip vereinigen |
el. | complementary MOS | ergänzendes MOS |
microel. | complementary MOS integrated circuit | integrierter CMOS-Schaltkreis |
comp. | complementary MOS technique | Komplementär-MOS-Technik |
comp. | complementary MOS technique | CMOS CMOS-Technik |
IT | complementary MOS technology | komplementäre MOS-Technik |
IT | complementary MOS technology | CMOS-Technologie |
gen. | complementary MOS technology MOS : vgl. semiconductor | C-MOS-Technik |
microel. | connect two complementary MOS transistors in parallel | zwei Komplementär-MOS-Transistoren parallelschalten |
microel. | construct entirely from MOS transistors | vollkommen aus MOS-Transistoren aufbauen |
comp., MS | Conversational MOS | Gesprächs-MOS (A prediction of the narrowband conversational quality MOS (MOS-CQ) of the audio stream that is played to the user. This value takes into account the listening quality of the audio played and sent across the network, the speech and noise levels for both audio streams, and echoes) |
comp., MS | conversational quality MOS | MOS für Gesprächsqualität (A class of MOS values that takes into account listening quality in each direction, as well as bidirectional effects, such as delay and echo) |
el. | depletion MOS field effect transistor | MOS-Feldeffekttransistor vom Verarmungstyp |
microel. | diffused self-aligned MOS technique | DSA-MOS-Technik |
microel. | diffusion self-aligned MOS transistor | MOS-Transistor mit Diffusionsselbstjustage |
comp. | double diffusion MOS technology | Doppeldiffusions-MOS-Technologie |
comp. | double diffusion MOS technology | D-MOS |
microel. | double polysilicon-gate MOS structure | Doppel-Poly-Si-Gate-MOS-Struktur |
microel. | double-diffused MOS technique | DMOS-Verfahren |
el. | dual-gate MOS field-effect transistor | MOS-Feldeffekttransistor mit zwei Gate-Elektroden |
comp. | dynamic MOS circuit | MOS-Schaltung in dynamischer Technik |
comp. | dynamic MOS circuit | dynamische MOS-Schaltung |
el. | dynamic MOS logic circuit | dynamische MOS-Logikschaltung |
comp. | ED-MOS | ED-MOS-Technik (MOSÉET-Schaltungstechnik mit Anreicherungstyp-Schalttransistor und Verarmungstyp-Lasttransistor) |
comp. | ED-MOS | ED-MOS |
comp. | enhancement depletion-load MOS technology | ED-MOS-Technik (MOSÉET-Schaltungstechnik mit Anreicherungstyp-Schalttransistor und Verarmungstyp-Lasttransistor) |
comp. | enhancement depletion-load MOS technology | ED-MOS |
el. | enhancement MOS field-effect transistor | MOS-Feldeffekttransitor vom Anreicherungstyp |
el. | enhancement MOS instability | Instabilität von Anreicherungs-MOS-Transistoren |
IT, nat.sc. | field effect transistor of MOS technology | Feldeffekttransistor in MOS-Technik |
microel. | floating avalanche-injection MOS transistor | FAMOS-Transistor |
comp. | floating gate avalanche injection MOS | MOS-Speicherelektrodentechnik mit schwimmendem Gate (z. B. für RePROM) |
comp. | floating gate avalanche injection MOS | FAMOS |
microel. | floating-gate avalanche MOS design | FAMOS-Entwicklung |
microel. | floating-gate avalanche MOS technology | FAMOS-Technik |
microel. | floating-gate avalanche-injection MOS transistor | FAMOS-Transistor |
microel. | gate material for MOS transistors | Gatematerial für MOS-Transistoren |
microel. | H-MOS memory circuit | HMOS-Speicherschaltkreis |
microel. | H-MOS technique | HMOS-Technik |
comp. | high-density n-channel silicon-gate MOS technology | hochdichte n-Kanal-Siliziumgate-MOS-Technologie |
comp. | high-density n-channel silicon-gate MOS technology | HMOS-Technologie |
comp. | high-performance MOS | Hochleistungs-MOS |
comp. | high-performance MOS | Hochleistungsn-Kanal-MOS-Technologie |
comp. | high-performance MOS | HMOS |
microel. | high-performance MOS technique | HMOS-Technik |
comp. | high-performance n-channel MOS technology | Hochleistungsn-Kanal-MOS-Technologie |
comp. | high-performance n-channel MOS technology | Hochleistungs-MOS |
comp. | high-performance n-channel MOS technology | HMOS |
el. | hybrid MOS-bipolar i.c. | hybride integrierte Schaltung mit MOS und bipolaren Transistoren |
microel. | key MOS device parameter | wichtigster Parameter der MOS-Bauelemente |
microel. | key MOS device parameter | zentraler Parameter der MOS-Bauelemente |
el. | ladder-array of MOS transistors | Kettenanordnung von MOS-Transistoren |
el. | lateral double diffused MOS | lateraler DMOS-Transistor |
el. | lateral double diffused MOS | laterale DMOS-Technik |
microel. | linear array of closely spaced MOS capacitors | reihenweise Anordnung von räumlich eng benachbarten MOS-Kondensatoren |
comp., MS | Listening MOS | Hör-MOS (A prediction of the wideband listening quality MOS (MOS-LQ) of the audio stream that is played to the user. This value takes into account the audio fidelity and distortion and speech and noise levels) |
comp., MS | listening quality MOS | MOS für Hörqualität (Within the VoIP industry, a commonly used class of MOS values that measures the quality of audio for listening purposes only, without taking into account any bidirectional effects, such as delay and echo) |
el. | maze-geometry MOS transistor | MOS-Transistor mit Labyrinthgeometrie |
el. | MOS amplifier | MOS-Verstärkertransistor |
el. | MOS amplifying transistor | MOS-Verstärkertransistor |
el. | MOS-bipolar transistor integrated circuit | hybride integrierte Schaltung mit MOS und bipolaren Transistoren |
el. | MOS capacitor | MOS-Kondensator |
el. | MOS-capacitor equivalent circuit | Ersatzschaltung eines MOS-Kondensators |
comp. | MOS circuit | unipolarer Schaltkreis |
comp. | MOS circuit | MOS-Schaltkreis |
microel. | MOS circuit technology | MOS-Schaltkreistechnik |
gen. | MOS circuits MOS : vgl. semiconductor | MOS-Schaltkreise |
el. | MOS controlled thyristor | MOS-Thyristor |
microel. | MOS device | MOS-Bauteil |
comp. | MOS device | Bauelement auf Basis einer Metallgate-Oxidisolator-Halbleiterschicht-Kombination |
comp. | MOS device | MOS-Bauelement |
el. | MOS digital element | MOS-Schalttransistor |
el. | MOS dynamic logic circuit | dynamische MOS-Logikschaltung |
comp. | MOS F ET | MOS-Feldeffekttransistor |
comp. | MOS F ET | Metalloxidhalbleiter-Feldeffekttransistor (MISFET mit SiO2-Gateisolierung) |
comp. | MOS F ET | MOSFET M |
gen. | mos illegal | widerrechtlichstem |
el. | MOS instability | Instabilität von MOS-Bauelementen |
microel. | MOS integrated circuit | MOS-Schaltkreis |
microel. | MOS integrated circuit | integrierter Metall-Oxid-Halbleiter-Schaltkreis |
IT, dat.proc. | MOS memory | Mos-Speicher |
comp. | MOS memory | unipolarer Speicher |
el. | MOS NAND gate | MOS-NAND-Verknüpfungsglied |
el. | MOS NOR gate | MOS-NOR-Verknüpfungsglied |
el. | MOS parasitic transistor | parasitärer MOS-Transistor |
el. | MOS process | MOS-Prozess |
el. | MOS punch-through breakdown | MOS-Durchgreifspannung |
comp. | MOS RAM | unipolarer RAM |
comp. | MOS RAM | Lese-SchreibSpeicher in unipolarer Metalloxidhalbleitertechnik |
comp. | MOS RAM | MOS-RAM |
el. | MOS resistor | MOS-Widerstand |
el. | MOS structure | MOS-Aufbau |
el. | MOS substrate | MOS-Träger |
el. | MOS substrate | MOS-Substrat |
el. | MOS switch | MOS-Schalttransistor |
el. | MOS switching transistor | MOS-Schalttransistor |
comp. | MOS technology | Metalloxidhalbleitertechnologie |
comp. | MOS technology | MOS |
IT, el. | MOS technology | MOS-Technologie |
comp. | MOS technology | MOS-Technik |
gen. | MOS metal-oxide-semiconductor technology | MOS-Technik |
el. | MOS transistor | MOS-Transistor |
microel. | n-MOS technology | NMOS-Technik |
microel. | n-MOS technology | n-MOS-Technik |
microel. | n-MOS transistor | n-Kanal-MOS-Transistor |
el. | n-channel depletion MOS field-effect transistor | N-Kanal-Verarmungs-MOS-Feldeffekttransistor |
gen. | N-channel depletion MOS transistor | N-Kanal-MOST |
el. | n-channel enhancement MOS field-effect transistor | N-Kanal-Anreicherungs-MOS-Feldeffekttransistor |
gen. | N-channel enhancement MOS transistor | N-Kanal-MOST |
comp. | n-channel MOS | nMOS |
comp. | n-channel MOS | n-Kanal-MOS |
comp. | n-channel MOS | n-Kanal-MOS-Technologie |
el. | n-channel MOS | N-Kanal-Metall-Oxid-Halbleiter |
el. | N-channel MOS | N-Kanal-Metall-Oxid-Halbleiter |
comp. | n-channel MOS | nMOS-Technologie |
comp. | n-channel MOS | n-Kanal-Metalloxidhalbleitertechnologie |
comp. | n-channel MOS circuit | nMOS-Schaltkreis |
comp. | n-channel MOS circuit | n-Kanal-MOS-Schaltkreis |
microel. | n-channel MOS memory cell | n-Kanal-MOS-Speicherzelle |
microel. | n-channel MOS silicon-gate technology | n-Kanal-Si-Gate-Technik |
microel. | n-channel MOS silicon-gate technology | n-SGT |
microel. | n-channel MOS silicon-gate technology | n-Kanal-Siliziumgatetechnik |
comp. | n-channel MOS technology | nMOS |
comp. | n-channel MOS technology | n-Kanal-MOS |
IT, el. | N-channel MOS technology | NMOS-Technologie |
comp. | n-channel MOS technology | n-Kanal-MOS-Technologie |
comp. | n-channel MOS technology | n-Kanal-Metalloxidhalbleitertechnologie |
comp. | n-channel silicon gate MOS technology | n-SGT |
comp. | n-channel silicon gate MOS technology | n-SG-MOS |
comp. | n-channel silicon gate MOS technology | n-Kanal-Siliziumgate-MOS-Technologie |
microel. | n-channel V-MOS transistor | n-Kanal-VMOS-Transistor |
IT, el. | negative-channel MOS technology | NMOS-Technologie |
comp., MS | Network MOS | Netzwerk-MOS (A prediction of the wideband listening quality MOS (MOS-LQ) of audio that is played to the user. This value takes into account only network factors such as codec used, packet loss, packet reorder, packet errors and jitter) |
microel. | operational amplifier in n-channel MOS technology | Operationsverstärker in n-MOS-Technik |
IT | P-MOS | p-Kanal-MOS |
IT | P-MOS | PMOS-Technologie |
microel. | p-MOS technology | PMOS-Technik |
microel. | p-MOS technology | p-MOS-Technik |
el. | parasitic MOS transistor | parasitärer MOS-Transistor |
el. | p-channel depletion MOS field-effect transistor | P-Kanal-MOS-Feldeffekttransistor vom Verarmungstyp |
el. | p-channel enhancement MOS field-effect transistor | P-Kanal-MOS-Feldeffekttransistor vom Anreicherungstyp |
microel. | p-channel enhancement MOS transistor | p-Kanal-MOS-Feldeffekttransistor vom Anreicherungstyp |
el. | P-channel MOS | P-Kanal-Metall-Oxid-Halbleiter |
microel. | p-channel MOS memory cell | p-Kanal-MOS-Speicherzelle |
IT | p-channel MOS technology | PMOS-Technologie |
IT | p-channel MOS technology | p-Kanal-MOS |
microel. | p-channel MOS technology | p-Kanal-MOS-Technik |
microel. | p-channel MOS transistor | p-Kanal-MOS-Transistor |
microel. | planar n-MOS transistor | n-MOS-Planartransistor |
el. | positive channel MOS | P-Kanal-Metall-Oxid-Halbleiter |
IT | positive-channel MOS technology | p-Kanal-MOS |
microel. | quad MOS clock driver | Vierfach-MOS-Takttreiber |
microel. | scaled version of MOS devices | skalierte Ausführung von MOS-Bauelementen |
microel. | self-align the diffusions to the V-groove and MOS devices | die Diffusionen zu den VMOS- und n-MOS-Bauelementen selbstjustieren |
comp., MS | Sending MOS | Sende-MOS (A prediction of the wideband listening quality MOS (MOS-LQ) of the audio stream that is being sent from the user. This value takes into account the speech and noise levels of the user along with any distortions) |
microel. | short-channel n-MOS device | Kurzkanal-n-MOS-Bauelement |
el. | silicon MOS transistor | MOS-Siliziumtransistor |
microel. | silicon-gate MOS device | Siliziumgatter-MOS-Bauelement |
microel. | slug-Signal analysis of the MOS transistor | Kleinsignalanalyse des MOS-Transistors |
microel. | stacked-gate avalanche injection MOS transistor | SAMOS-Transistor |
microel. | stacked-gate injection MOS transistor | SIMOS-Transistor |
IT, el. | static MOS circuits | statische MOS-Schaltungen |
gen. | submicron feature size in MOS | MOS-Merkmalsgrössen im Submikronbereich |
gen. | submicron MOS | MOS im Submikronbereich |
el. | thick-oxide MOS device | MOS-Bauelement mit dicker Oxidschicht |
microel. | TTL-compatible output on complementary-MOS chip | TTL-kompatibler Ausgang auf C-MOS-Chip |
microel. | V-MOS power field-effect transistor | VMOS-Leistungsfeldeffekttransistor |
microel. | V-MOS technique | VMOS-Technik |
microel. | V-MOS technology | VMOS-Technik |
microel. | V-MOS transistor | VMOS-Transistor |
IT, el. | vertical MOS | Vertikal MOS |
microel. | V-groove MOS technology | V-MOS-Technik |
microel. | V-groove MOS technology | VMOS-Technik |
microel. | V-grooved MOS approach | VMOS-Technik (technology) |