Очень нужно помощь!!!

link 1.12.2010 13:43

Subject: Очень нужно помощь!!!

не могу понять, как тут нормально, со смыслом можно перевести: sparse line patterns,
dense line patterns, sparse feature, line dose, range of doses
Просто весь перевод, который нашёл, получается как то не по-русски и к тексту не имеет никакого отношения.

To examine the viability of the resists for nanolithogra-phy, sparse and dense line patterns were written using the Raith lithography system. Fig. 4a shows lines and spaces with a half pitch of 25 nm written in Resist В with a line dose of 140 pC/cm. A PAB of 75 °C for 600 s and a РЕВ of 90 °C for 180 s were applied prior to development. The LWR of these lines was measured to be 4.0 nm. In comparison the line dose required by a pure fullerene film would be approximately 10,000 pC/cm. Fig. 4b shows sparse features with a line width of 15 nm written with a line dose of 240 pC/cm. In this case no PAB was applied and the РЕВ was as before. The LWR for these lines was 6.0 nm. In the case of Resist В the best line width rough¬ness was found to be 2.4 nm, measured on 18 nm sparse lines exposed at ~600 pC/cm.
Even higher resolutions were achievable in Resist A. Fig. 5a shows lines and spaces with a half pitch of 20 nm written in Resist В with a line dose of 200 pC/cm. A PAB of 75 °C for 300 s and a РЕВ of 90 °C for 180 s were applied prior to development. The LWR was measured to be 4.4 nm. Fig. 4b shows sparse features with a line width of 12 nm written with a line dose of 240 pC/cm. The PAB and РЕВ were as before. The LWR for these lines has not been calculated.

Заранее, огромное спасибо.

lisulya ✉

link 1.12.2010 23:01

Близко / далеко расположенные линии/элементы

Line dose -- (resist) exposure dose IMHO

din-88 ✉

link 2.12.2010 13:38

Получается, что Resist В with a line dose of 140 pC/cm, это линии/элементы расположены на такую-то величину??

lisulya ✉

link 2.12.2010 15:25

Нет, это я думаю сила светового излучения, который подается в виде "линии" а не пучка

lisulya ✉